| Laser drilling of vias in silicon |
| Where chips were previously forced to lie adjacent to one another, they can now be stacked for 3D package designs as a method of improving space efficiency and connectivity. Applications include stacked-die memory modules, System-in-Package, and wafer scale packaging. Significant performance improvements can be obtained by using vias for backside contacting for MEMS, and backside grounding for RF and mixed signal IC’s. |
| XSiL has developed a processing solution for the drilling of vias through silicon to enable true 3D packaging and backside contacting. The X300V is the cost-effective, high-volume production system for drilling vias through silicon and other materials. With a platform designed for drilling vias and machining wafers of up to 300mm, the X300V allows for high-volume manufacturing of vias through silicon at rates up to hundreds of vias per second. Complete with bare wafer handling and top and bottom-side vision, the X300V offers wafer inversion capabilities. There is no set-up time between product batches, even for mixed lots. The process also allows for drilling through various, individual material layers in wafer thicknesses ranging from microns up to over one millimetre. With superb quality vias and aspect ratios of up to 35:1, the X300V enables the production of package designs that were previously unattainable. |
